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20V P-Channel MOSFETs
PDN2311S
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D
D
S G
G S
BVDSS -20V
RDSON 50mΩ
ID -4.7A
Features -20V,-4.7A, RDS(ON)=50mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications
Applications
Notebook Load Switch Hend-Held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power.