DatasheetsPDF.com

PDN2311S Dataheets PDF



Part Number PDN2311S
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description P-Channel MOSFETs
Datasheet PDN2311S DatasheetPDN2311S Datasheet (PDF)

20V P-Channel MOSFETs PDN2311S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 50mΩ ID -.

  PDN2311S   PDN2311S


Document
20V P-Channel MOSFETs PDN2311S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -20V RDSON 50mΩ ID -4.7A Features  -20V,-4.7A, RDS(ON)=50mΩ@VGS=-4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.8V Gate Drive Applications Applications  Notebook  Load Switch  Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power.


PDN2309S PDN2311S PDN2313S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)