40V P-Channel MOSFETs
PDN4911S
General Description
These P-Channel enhancement mode power field effect transistors are...
40V P-Channel MOSFETs
PDN4911S
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S G
G
S
BVDSS -40V
RDSON 68m
ID -2.9A
Features -40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V
Fast switching Green Device Available
Suit for -4.5V Gate Drive Applications
Applications
POL Applications Load Switch LED Application
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=100℃) Drain Current – Pulsed1 Power Dissipation (TA=25℃) P...