PDN4911S

40V P-Channel MOSFETs PDN4911S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -40V RDSON 68m ID -2.9A Features  -40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  POL Applications  Load Switch  LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=100℃) Drain Current – Pulsed1 Power Dissipation (TA=25℃) P...