PDN02P15S

150V P-Channel MOSFETs Preliminary Datasheet PDN02P15S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D G BVDSS -150V RDSON 750m ID -1A Features  -150V,-1A, RDS(ON) =750mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Networking  Load Switch  LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Pow...