20V P-Channel MOSFETs
PDQ2307
General Description These P-Channel enhancement mode power field effect transistors are ...
20V P-Channel MOSFETs
PDQ2307
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-6 Pin Configuration
DDS G
D D
G
D
S S
BVDSS -20V
RDSON 26mΩ
ID -6.5A
Features -20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.8V Gate Drive Applications
Applications
Notebook Load Switch Networking
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipa...