PDQ3907

Preliminary datasheet 30V P-Channel MOSFETs PDQ3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration DS D G D BVDSS -30V RDSON 23m ID -5.5A Features  -30V,-5.5A, RDS(ON) =23mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  MB / VGA / Vcore  POL Applications  Load Switch  LED Application G DD S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Curr...