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PDQ3911 Dataheets PDF



Part Number PDQ3911
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description P-Channel MOSFETs
Datasheet PDQ3911 DatasheetPDQ3911 Datasheet (PDF)

30V P-Channel MOSFETs PDQ3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration D DDS G D D G S BVDSS -30V RDSON 65mΩ I.

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30V P-Channel MOSFETs PDQ3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration D DDS G D D G S BVDSS -30V RDSON 65mΩ ID -4.1A Features  -30V,-4.1A, RDS(ON) =65mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power D.


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