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30V P-Channel MOSFETs
PDQ3911
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-6 Pin Configuration
D
DDS G
D D
G
S
BVDSS -30V
RDSON 65mΩ
ID -4.1A
Features -30V,-4.1A, RDS(ON) =65mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications
Applications
Notebook Load Switch Battery Protection Hand-held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power D.