PDQ2116

20V N+P Dual Channel MOSFETs PDQ2116 General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Dual Pin Configuration D1 D1 S1 D2 G1 G G2 D2 Features  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications Applications  Notebook  Load Switch  Networking G2  Hand-held Instruments G1 S2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – P...