30V N+P Dual Channel MOSFETs
General Description
These N+P dual Channel enhancement mode power field effect transistors...
30V N+P Dual Channel MOSFETs
General Description
These N+P dual Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-6 Dual Pin Configuration
D2 S1 D1
D1
G1 G2 S2 G1
G2 S1
D2 2
S2
PDQ3714
BVDSS 30V -30V
RDSON 30m 65m
ID 4A -3A
Features
Fast switching Green Device Available Suit for 4.5V Gate Drive Applications
Applications
DC Fan Motor Drive Applications Networking Half / Full Bridge Topology
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curren...