DatasheetsPDF.com

PDQ2218 Dataheets PDF



Part Number PDQ2218
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description Dual N-Channel MOSFETs
Datasheet PDQ2218 DatasheetPDQ2218 Datasheet (PDF)

Preliminary datasheet 20V Dual N-Channel MOSFETs PDQ2218 General Description These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Dual Pin Configuration D1 S1 D.

  PDQ2218   PDQ2218


Document
Preliminary datasheet 20V Dual N-Channel MOSFETs PDQ2218 General Description These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Dual Pin Configuration D1 S1 D2 D1 D2 G1 S2 G2 G1 G2 S1 S2 BVDSS 20V RDSON 60m ID 3.6A Features  20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications Applications  Notebook  Load Switch  Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Curre.


PDQ3714 PDQ2218 PDQ02N15


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)