Document
Preliminary datasheet
20V Dual N-Channel MOSFETs
PDQ2218
General Description
These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-6 Dual Pin Configuration
D1 S1 D2
D1
D2
G1 S2 G2 G1
G2 S1
S2
BVDSS 20V
RDSON 60m
ID 3.6A
Features
20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications
Applications
Notebook Load Switch Hend-Held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Curre.