PDQ02N15

150V N-Channel MOSFETs PDQ02N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration D DS D DD G G S BVDSS 150V RDSON 480m ID 1.4A Features  150V,1.4A, RDS(ON) =480mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed ApplicGaretieonnDsevice Available  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25...