30V/8A Dual N-Channel Advanced Power MOSFET
Features
30V/8A
Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V
Low On-Resistance 150°C Operating Temperature F...
Description
Features
30V/8A
Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V
Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant
VS3009DS
30V/8A Dual N-Channel Advanced Power MOSFET
SOP8
Description
VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ TSTG IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
TC =25°C
IDM Pulse Drain Current Tested
TC =25°C
ID Continuous Drain Current(VGS=10V)
TC =25°C TC =100°C
PD Maximum Power Dissipation
TC =25°C
RJA Thermal Resistance Jun...
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