HY1403U

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (...