Document
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available
Pin Description
S
D G
TO-252-2L
S
D G
TO-251-3L
S
D G
TO-251-3L
Applications
• High Frequency Synchronous Buck
Converters for Computer Processor Power
• High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
Ordering and Marking Information
D
G N-Channel MOSFET
S
DUS HY1603 HY1603 HY1603
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code D : TO-252-2L S : TO-251-3L
Date Code YYXXX WW
U : TO-251-3L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requi.