HY3003B

HY3003P/B N-Channel Enhancement Mode MOSFET Features 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Ordering and Marking Information D G N-Channel MOSFET S PB HY3003 HY3003 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classificatio...