N-Channel MOSFET
HY1804D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-So...
Description
HY1804D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
L=0.3mH
Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V
Rating
40 ±20 175 -55 to 175 80
320** 80 54 62.5 31.2 2.4 110 340***
Electrical Characteristics
(T C
=
25°C
Unless
Otherwise
Noted)
Unit
V °C °C A
A A
W °C/W °C/W
mJ
Symbol
Parameter
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)...
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