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HY1710 Dataheets PDF



Part Number HY1710
Manufacturers HOOYI
Logo HOOYI
Description N-Channel MOSFET
Datasheet HY1710 DatasheetHY1710 Datasheet (PDF)

HY1710P/M/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 70 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Av.

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HY1710P/M/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 70 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 252** 70 46 150 75 1.0 62.5 EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=80V 300*** Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero .


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