VS3640DB

Features  Dual N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant VS3640DB 30V Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 14 mΩ 22 mΩ 25 A DFN3x3 Part ID VS3640DB Package Type DFN3x3 Marking 3640DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V ① IDM Pulse drain current tested ② IDSM Continuous drain current @VGS=10V PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TA =25°C ...