VS4N60AI

Features  N-Channel，10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Fast Switching  Pb-free lead plating; RoHS compliant VS4N60AI 600V/4A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 600 V 2.9 Ω 4A TO-251SL Part ID VS4N60AI Package Type TO-251SL Marking 4N60AI Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =...