N-Channel Advanced Power MOSFET
Features
N-Channel,10V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=10 V Fast Switching ...
Description
Features
N-Channel,10V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=10 V Fast Switching Pb-free lead plating; RoHS compliant
VS4N55AI
550V/4A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V ID
550 V 2.1 Ω 4A
TO-251SL
Part ID VS4N55AI
Package Type TO-251SL
Marking 4N55AI
Tape and reel information 75pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ①
IDSM Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation
Maximum power dissipation ③
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient
TC =25°C TC =25°C TC =100°C TC =...
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