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VSM007N07MS Dataheets PDF



Part Number VSM007N07MS
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VSM007N07MS DatasheetVSM007N07MS Datasheet (PDF)

Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 8 mΩ 9 mΩ I D 80 A TO-263 Part ID VSM007N07MS Package Type TO-263 Marking 007N07M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Par.

  VSM007N07MS   VSM007N07MS


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Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V 8 mΩ 9 mΩ I D 80 A TO-263 Part ID VSM007N07MS Package Type TO-263 Marking 007N07M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TA=2.


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