Document
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSM007N07MS
80V/80A N-Channel Advanced Power MOSFET
V DS
80 V
R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V
8 mΩ 9 mΩ
I D 80 A
TO-263
Part ID VSM007N07MS
Package Type TO-263
Marking 007N07M
Tape and reel information
1000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ①
IDSM Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation
Maximum power dissipation ③
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
TC =25°C
TA=2.