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VS3604DT

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=4.5 V  Ultra-Low Gate Impedance  10...


Vanguard Semiconductor

VS3604DT

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Description
Features  N-Channel,5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=4.5 V  Ultra-Low Gate Impedance  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3604DT 30V/300A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 1.3 mΩ 1.6 mΩ I D 300 A TO-220AB Part ID VS3604DT Package Type TO-220AB Marking 3604DT Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resista...




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