VSD050P10MS

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD050P10MS -100V/-34A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -100 V 47 mΩ 49 mΩ -34 A TO-252 Part ID Package Type VSD050P10MS TO-252 Marking Tape and reel information 050P10M 2500PCS/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics RJC Thermal Resistance, Junction-to-Case R...