Document
Features
P-Channel,-5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=-4.5 V 100% Avalanche test Pb-free lead plating; RoHS compliant
VS3506AS
-30V/-19A P-Channel Advanced Power MOSFET
V DS
-30 V
R @DS(on),TYP VGS=-10 V
5.7 mΩ
R @DS(on),TYP VGS=-4.5 V 8.6 mΩ
I D -19 A
SOP8
Part ID VS3506AS
Package Type SOP8
Marking 3506AS
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=-10V
IDM EAS PD VGS
Pulse drain current tested ①
Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage
TA =25°C TA =25°C TA =100°C TA =25°C
TA =25°C
MSL
TSTG , TJ Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
RθJL Thermal Resistance, Junction-to-Lead RθJA Thermal Resistance, Junction-to-Ambient
Rating
-30 .
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