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VSC180P06MS

Vanguard Semiconductor

P-Channel Advanced Power MOSFET

Features  P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Swi...


Vanguard Semiconductor

VSC180P06MS

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Description
Features  P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free VSC180P06MS -60V/-2.1A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -60 140 170 -2.1 V mΩ mΩ A SOT23 Part ID VSC180P06MS Package Type SOT23 Marking P06 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ② PD Power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG Storage temperature range TJ Maximum Junction Temperature① Thermal Characteristics Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating -60 -1.2 -2....




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