P-Channel Advanced Power MOSFET
Features
P-Channel,-5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=-4.5 V Fast Swi...
Description
Features
P-Channel,-5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching High Effective Pb-free lead plating; RoHS compliant; Hg-Free
VSC180P06MS
-60V/-2.1A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID
-60 140 170 -2.1
V mΩ mΩ A
SOT23
Part ID VSC180P06MS
Package Type SOT23
Marking P06
Tape and reel information 3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ② PD Power dissipation VGS Gate-Source voltage
TA =25°C TA =25°C TA =100°C TA =25°C
TA =25°C
TSTG Storage temperature range TJ Maximum Junction Temperature①
Thermal Characteristics
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient
Rating
-60 -1.2 -2....
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