VS3503AP

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3503AP -30V/-120A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 3.6 mΩ 5.6 mΩ -120 A PDFN5x6 Part ID VS3503AP Package Type PDFN5x6 Marking 3503AP Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C ...