VSD045P10MS

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD045P10MS -100V/-35A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -100 V 46 mΩ 51 mΩ -35 A TO-252 Part ID Package Type VSD045P10MS TO-252 Marking Tape and reel information 045P10M 2500PCS/Reel Maximum ratings, at T j =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rat...