VS3510AE

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VS3510AE -30V/-37A P-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=-10 V R @ DS(on),TYP VGS=-4.5V ID -30 V 10 mΩ 18 mΩ -37 A PDFN3333 Part ID VS3510AE Package Type PDFN3333 Marking 3510AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=-10V Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient TC =25°C Rating -30 ±25 -37 -37 -23 -148 49 33 -55 to 150 Typical 3.8 35 Unit V V A A A A mJ W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev D – SEP, 2020 www.vgsemi.com Electrical Characteristics Symbol Parameter VS3510AE -30V/-37A P-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V Zero Gate Voltage Drain Current VDS=-30V,VGS=0V IDSS Zero Gate Voltage D...