P-Channel Advanced Power MOSFET
Features
P-Channel,-5V Logic Level Control Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mod...
Description
Features
P-Channel,-5V Logic Level Control Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mode 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS3506AD
-30V/-80A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID
-30 V 6.5 mΩ 10 mΩ -80 A
TO-252
Part ID VS3506AD
Package Type TO-252
Marking 3506AD
Tape and reel information 2500PCS/Reel
Maximum ratings, at T A =25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS Diode continuous forward current
ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ①
IDSM Continuous drain current @VGS=-10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation
Maximum power dissipation ③
MSL
TSTG TJ
Storage and Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Juncti...
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