VSO010P03MD

Features  Dual P-Channel, -5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant VSO010P03MD -30V/-10A Dual P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 13 16 -10 SOP8 V mΩ mΩ A Part ID VSO010P03MD Package Type SOP8 Marking 010P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=-10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG Storage temperature range TJ Maximum Junction Temperature Thermal Characteristics Symbol Parameter RθJL R JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Rating -30 -2 -10...