VSB004P02KS

Features  P-Channel，-2.5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Pb-free lead plating; RoHS compliant VSB004P02KS -12V/-65A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-4.5 V R @DS(on),TYP VGS=-2.5V ID -12 V 4.8 mΩ 6 mΩ -65 A TDFN3.3x3.3 Part ID Package Type VSB004P02KS TDFN3.3x3.3 Marking Tape and reel information 004P02K 5000pcs/reel Maximum ratings, at T j =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=-4.5V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient TA =25°C TA =25°C TA =100°C TA =25°...