VSZ260P10MS

Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VSZ260P10MS -100V/-2.2A P-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=-10 V R @ DS(on),TYP VGS=-4.5V ID -100 V 250 mΩ 260 mΩ -2.2 A SOT223 Part ID Package Type VSZ260P10MS SOT223 Marking Tape and reel information 260P10M 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings VGS Gate-Source Voltage V(BR)DSS TSTG TJ Drain-Source Breakdown Voltage Storage and operating temperature range① IS Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current @VGS=-10V IDM Pulse Drain Current Tested ② PD Maximum Power Dissipation RθJL Thermal Resistance-Junction to Lead RθJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ③ Rating Unit ±20 V -100 V -55 to 150 °C TA =25°C -2.2 A TA =25°C -2.2 TA =100°C -1.4 TA =25°C -8 TA =25°C 2.5 35 50 A A A W °C/W °C/W TBD mJ Copyright Vanguard Semiconductor Co., Ltd Rev B– JUN 2020 www.vgsemi.com VSZ260P10MS -100V/-2.2A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -100 -- -- V Zero Gate Voltage Drain Current VDS=-10...