VS3508AE

Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VS3508AE -30V/-47A P-Channel Advanced Power MOSFET V DS -30 V R @ DS(on),TYP VGS=-10 V 8.5 mΩ R @ DS(on),TYP VGS=-4.5V 15 mΩ ID -47 A PDFN3333 Part ID VS3508AE Package Type PDFN3333 Marking 3508AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Rθ JC Thermal Resistance, Junction-to-Case Rθ JA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TA=25°C Rating -30 ±25 -47 -47 -30 -188 14 11 81 38 3.5 -55 to 150 Typical 3.3 35 Unit V V A A A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev. E– OCT, 2020 www.vgsemi.com Electrical Characteristics VS3508AE -30V/-47A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-S...