VSI050P10MS

Features  P-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating； RoHS compliant; Hg-Free VSI050P10MS -100V/-25A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -100 45 48 -25 V mΩ mΩ A TO-251 Part ID VSI050P10MS Package Type TO-251 Marking 050P10M Tape and reel information 75cs/Tube Absolute Maximum Ratings Symbol Parameter Common Ratings (TC =25°C Unless Otherwise Noted) VGS V(BR)DSS TJ TSTG IS Gate-Source Voltage Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested ① ID Continuous Drain current@VGS=10V PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient(ts<10s) Drain-Source Avalanche Ratings EAS Avalanche Energy,...