VSD007P06MS

Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD007P06MS -60V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -60 V 9.0 mΩ 11.0 mΩ -80 A TO-252 Part ID Package Type VSD007P06MS TO-252 Marking Tape and reel information 007P06M 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range① Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current @VGS=-10V IDM Pulse Drain Current Tested ② PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Rat...