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VSO006P03MS

Vanguard Semiconductor

P-Channel Advanced Power MOSFET

Features  P-Channel,-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancemen...


Vanguard Semiconductor

VSO006P03MS

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Description
Features  P-Channel,-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VSO006P03MS -30V/-15A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6.2 mΩ 8.5 mΩ -15 A SOP8 Part ID Package Type VSO006P03MS SOP8 Marking Tape and reel information 006P03M 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ Drain-Source Breakdown Voltage Maximum Junction Temperature TSTG Storage Temperature Range① IS Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current @VGS=-10V IDM Pulse Drain Current Tested ② PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient Rating TC =25°C ±20 -30 150 -55 to 175 -15 TC =25°C...




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