P-Channel Advanced Power MOSFET
Features
P-Channel Enhancement mode Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Pb-free lead plating...
Description
Features
P-Channel Enhancement mode Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Pb-free lead plating; RoHS compliant Green product
VS3403AC
-30V/-2.8A P-Channel Advanced Power MOSFET
V DS R DS(on),typ. @ Vgs=-10V R DS(on),typ. @ Vgs=-4.5V ID
-30 V 85 mΩ 100 mΩ -2.8 A
Order Information
Product VS3403AC
Marking A3V3
Package SOT23
Packaging 3000/Reel
Min Unit Quantity 6000
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal characteristics
RJA Thermal Resistance Junction-Ambient
TC =25°C TA =70°C TC =25°C TC =25°C
Rating
-30 -2.8 -1.8 -11.2 1.3 ±12 -55 to 150
125
Unit
V A A A W V °C
°C/W
Copyright Vanguard Semiconductor Co., Ltd Rev B– Nov.22th, 2014
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