VS3415AC

Features  Enhancement mode  Fast Switching  ESD Protection HBM ±400V  Pb-free lead plating; RoHS compliant VS3415AC -20V/-3.4A P-Channel Advanced Power MOSFET V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-2.5V R DS(on),TYP @VGS=-1.8V ID -20 V 60 mΩ 85 mΩ 125 mΩ -3.4 A SOT23 Part ID VS3415AC Package Type SOT23 Marking V25 Tape and reel information 3000pcs/reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① PD Maximum power dissipation TSTG , TJ Storage and operating temperature range Thermal Characteristics TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C RθJL R JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Rating -20 ±8 -0.8 -3.4 -2.7 -14 1 -55 to 150 80 125 Unit V V A A A A W °C °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B - JAN, 2020 www.vgsemi.com Electrical Characteristics VS3415AC -20V/-3.4A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ T j = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=-20V,VGS=0V -- -- -1 μA IDSS Zero Gate Voltage Drain Current(Tj=125℃) VDS=-20V,VGS=0V -- -- -100 μA IGSS VGS(TH...