N+P-Channel Advanced Power MOSFET
Features
♦N-CH: 30V/8A,RDS(ON)=18mΩ ♦P-CH: -30V/-7.8A,RDS(ON)=20mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast...
Description
Features
♦N-CH: 30V/8A,RDS(ON)=18mΩ ♦P-CH: -30V/-7.8A,RDS(ON)=20mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, Green Product
VS4503AS
30V/8A N+P Channel Advanced Power MOSFET
Pin Description
Description
VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ TSTG IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current①
Mounted on Large Heat Sink
TC =25°C
IDM Pulse Drain Current Tested②
TC =25°C
TC =25°C ID Continuous Drain Current(VGS=-10V)
TC =100°C
PD Maximum Power Dissipation
TC =25°C
RθJA Thermal Resista...
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