VSE025C03MC

Features  N+P Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=±4.5 V  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSE025C03MC 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 15 24 mΩ 23 40 mΩ 25 -24 A PDFN3333 Part ID VSE025C03MC Package Type PDFN3333 Marking 025C03M Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=±10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=±10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C 30 ±20 25 25 16 100 11 9 -30 ±20 -24 -24 -15 -96 -9 -7 EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and j...