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VSO025C03MC

Vanguard Semiconductor

N+P-Channel Advanced Power MOSFET

Features  N+P Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=±4.5 V  Fast Switching  Pb-free lead plati...


Vanguard Semiconductor

VSO025C03MC

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Description
Features  N+P Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=±4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO025C03MC 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 15 23 mΩ 23 38 mΩ 10 -8 A SOP8 Part ID VSO025C03MC Package Type SOP8 Marking 025C03MC Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS Unit V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=±10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TA =25°C TA =25°C TA =100°C TA =25°C 30 1.6 10 6 40 14 -30 -1.6 -8 -5 -32 33 V A A A A mJ PD Maximum power dissipation VGS Gate-Source voltage TA =25°C 2 ±20 2 ±20 W V MSL Level 3 TSTG TJ Storage and operating temperature range Thermal Characteristics -55 to 150 -55 to 150 °C...




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