N+P-Channel Advanced Power MOSFET
Features
N+P Channel Enhancement mode Low on-resistance RDS(on) @ VGS=±4.5 V Fast Switching Pb-free lead plati...
Description
Features
N+P Channel Enhancement mode Low on-resistance RDS(on) @ VGS=±4.5 V Fast Switching Pb-free lead plating; RoHS compliant
VSO025C03MC
30V N+P Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID
30 -30 V 15 23 mΩ 23 38 mΩ 10 -8 A
SOP8
Part ID VSO025C03MC
Package Type SOP8
Marking 025C03MC
Tape and reel information
3000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating NMOS PMOS
Unit
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=±10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TA =25°C TA =25°C TA =100°C TA =25°C
30 1.6 10 6 40 14
-30 -1.6 -8 -5 -32 33
V A A A A mJ
PD Maximum power dissipation
VGS Gate-Source voltage
TA =25°C
2 ±20
2 ±20
W V
MSL
Level 3
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
-55 to 150 -55 to 150
°C...
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