N+P-Channel Advanced Power MOSFET
Features
N+P Channel Enhancement mode Very low on-resistance Fast Switching Pb-free lead plating; RoHS complia...
Description
Features
N+P Channel Enhancement mode Very low on-resistance Fast Switching Pb-free lead plating; RoHS compliant
VSP008C03MD
30V N+P Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID
30 -30 V 6.5 13 mΩ 10 24 mΩ 45 -35 A
PDFN5x6
Part ID VSP008C03MD
Package Type PDFN5x6
Marking 008C03MD
Tape and reel information
3000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating NMOS PMOS
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=±10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
30 45 45 29 180 25
-30 -35 -35 -22 -140 36
PD Maximum power dissipation
TC =25°C
25
28
VGS Gate-Source voltage
±20 ±20
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
-55 to 150 -55 to 150
Symbol
Parameter
Typical
RJC Thermal Re...
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