Document
Features
N+P Channel Enhancement mode Very low on-resistance Fast Switching Pb-free lead plating; RoHS compliant
VSD030C04MC
40V N+P Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID
40 -40 V 18 32 mΩ 24 38 mΩ 31 -22 A
TO-252-4L
Part ID
Package Type
VSD030C04MC
TO-252-4L
Absolute Maximum Ratings
Marking 030C04MC
Symbol
Parameter
Tape and reel information
2500pcs/Reel
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature① Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested②
ID Continuous Drain Current
PD Power dissipation for Dual Operation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC =25°C
TC =25°C TC =25°C TC =100°C TC =25.