DatasheetsPDF.com

VSD030C04MC Dataheets PDF



Part Number VSD030C04MC
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N+P-Channel Advanced Power MOSFET
Datasheet VSD030C04MC DatasheetVSD030C04MC Datasheet (PDF)

Features  N+P Channel  Enhancement mode  Very low on-resistance  Fast Switching  Pb-free lead plating; RoHS compliant VSD030C04MC 40V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 40 -40 V 18 32 mΩ 24 38 mΩ 31 -22 A TO-252-4L Part ID Package Type VSD030C04MC TO-252-4L Absolute Maximum Ratings Marking 030C04MC Symbol Parameter Tape and reel information 2500pcs/Reel Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Volta.

  VSD030C04MC   VSD030C04MC


Document
Features  N+P Channel  Enhancement mode  Very low on-resistance  Fast Switching  Pb-free lead plating; RoHS compliant VSD030C04MC 40V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 40 -40 V 18 32 mΩ 24 38 mΩ 31 -22 A TO-252-4L Part ID Package Type VSD030C04MC TO-252-4L Absolute Maximum Ratings Marking 030C04MC Symbol Parameter Tape and reel information 2500pcs/Reel Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature① Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested② ID Continuous Drain Current PD Power dissipation for Dual Operation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed TC =25°C TC =25°C TC =25°C TC =100°C TC =25.


VSO030C04MC VSD030C04MC VSO050M04MD


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)