VSO100M06MD

Features  N+P Channel  Enhancement mode  Very low on-resistance  Fast Switching  Pb-free lead plating; RoHS compliant VSO100M06MD 60V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 60 -60 V 70 75 mΩ 85 90 mΩ 4.5 -4.5 A SOP8 Part ID VSO100M06MD Package Type SOP8 Marking 100M06MD Tape and reel information 3000pcs/Reel Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature① Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested② ID Continuous Drain Current PD Power dissipation for Dual Operation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient TA =25°C TA =25°C TA =25°C TA =100°C TA =25°C Rating NMOS PMOS Unit ±16 ±16 60 -60 150 -50 to 150 4.5 -4.5 V V °C °...