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Z0103MUF Dataheets PDF



Part Number Z0103MUF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Standard 1A Triacs
Datasheet Z0103MUF DatasheetZ0103MUF Datasheet (PDF)

Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Repetitive peak off-state voltage, VDRM/VRRM 600 or 800 V • Triggering gate current, IGT (Q1) 3 to 25 mA Applications • AC switching • Home appliances Description The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, .

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Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Repetitive peak off-state voltage, VDRM/VRRM 600 or 800 V • Triggering gate current, IGT (Q1) 3 to 25 mA Applications • AC switching • Home appliances Description The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontroller. Product status link Z01 Product summary IT(RMS) 1A VDRM/VRRM 600, 800 V IGTstandard 3 to 25 mA DS2116 - Rev 13 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com Z01 Characteristics 1 Characteristics Symbol IT(RMS) ITSM I2t dl/dt IGM PG(AV) Tstg Tj Table 1. Absolute maximum ratings Parameters RMS on-state current (full sine wave) SOT-223 TO-92 Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range SMBflat-3L F = 50 Hz F = 60 Hz tp = 10 ms F = 120 Hz tp = 20 µs Ttab = 90 °C TL = 50 °C Ttab = 107 °C tp = 20 ms tp = 16.7 ms Value 1 8 8.5 0.35 Tj = 125 °C 20 Tj = 125 °C Tj = 125 °C 1 1 -40 to +150 -40 to +125 Unit A A A2s A/µs A W °C °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Value Symbol Parameters IGT(1) VGT VGD IH(2) VD = 12 V, RL = 30 Ω VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IT = 50 mA IL IG = 1.2 IGT dV/dt(2) (dV/dt)c(2) VD = 67 % VDRM gate open, Tj = 110 °C (dI/dt)c = 0.44 A/ms, Tj = 110 °C Quadrant I - II - III IV All All I - III - IV II 03 3 Max. 5 Max. Min. Max. 7 Max. 7 Max. 15 Min. 10 Min. 0.5 Z01 07 09 5 10 7 10 1.3 0.2 10 10 10 15 20 25 20 50 1 2 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1 Unit 10 25 mA 25 V V 25 mA 25 mA 50 100 V/µs 5 V/µs DS2116 - Rev 13 page 2/16 Z01 Characteristics Table 3. Static electrical characteristics Symbol Test conditions VT(1) VTO(1) Rd IDRM IRRM ITM = 1.4 A, tp = 380 µs Threshold on-state voltage Dynamic resistance VDRM = VRRM 1. For both polarities of A2 referenced to A1 Tj 25 °C 125 °C 125 °C 25 °C 125 °C Value Unit Max. 1.60 V Max. 0.95 V Max. 400 mΩ 5 µA Max. 0.5 mA Symbol Table 4. Thermal resistance Parameters Rth(j-t) Max. junction to tab (AC) Rth(j-l) Max. junction to lead (AC) Rth(j-a) Junction to ambient (S(1) = 5 cm²) Junction to ambient 1. Copper surface under tab. SOT-223 SMBflat-3L TO-92 SOT-223 SMBflat-3L TO-92 Max. value Unit 25 14 60 °C/W 60 75 150 DS2116 - Rev 13 page 3/16 Z01 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) P(W) 1.50 α =180 ° 1.25 1.00 0.75 0.50 0.25 180° IT(RMS) (A) 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 2. RMS on-state current versus lead (TO-92) or tab (SOT-223, SMBflat-3L) temperature (full cycle) IT(RMS)(A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 SOT-223 TO-92 SMBflat-3L Tlead or Ttab (°C) 50 75 100 125 Figure 3. On-state rms current versus ambient temperature(free air convection full cycle) IT(RMS)(A) 1.2 1.0 Rth(j-a) = 60°C/W (SOT-223) 0.8 0.6 0.4 0.2 0.0 0 Rth(j-a) = 150°C/W (TO-92) Tamb (°C) 25 50 75 Rth (j-a) = 100°C/W (SMBflat-3L) 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration (Zth(j-a)) K=[Z th(j-a) /Rth(j-a) ] 1.00 Z01xxA Z01xxMUF Copper surface area = 5cm² 0.10 Z01xxN 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tp(s) 1.0E+02 1.0E+03 Figure 5. Relative variation of holding current and latching current versus junction temperature (typ. values) 2.5 IH, IL [ Tj] /IH, IL [Tj=25°C] Figure 6. Relative variation of gate trigger current (IGT) and voltage (VGT) versus junction temperature IGT, V GT[T j] / IGT, V GT[T j=25 ° C] 3.0 2.0 1.5 1.0 IL 0.5 Tj (°C) IH 0.0 -50 -25 0 25 50 75 100 125 2.5 IGT Q1-Q2 2.0 IGT Q3 IGT Q4 1.5 1.0 VGT Q1-Q2-Q3-Q4 0.5 0.0 -50 -25 0 Tj(°C) 25 50 75 100 125 DS2116 - Rev 13 page 4/16 Z01 Characteristics (curves) Figure 7. Surge peak on-state current versus number of cycles 9 ITSM(A) 8 7 6 5 4 3 2 Repetitive 1 Tamb = 95 °C 0 1 Non repetitive Tjinitial = 25 °C 10 T = 20 ms One cy cle Number of cycles 100 1000 Figure 8. Non-repetitive surge peak on-state current and corresponding value of I2t sinusoidal pulse width ITSM (A), I2t (A2s ) 100. 0 dI/dt li mi tati on : 20A/µs 10. 0 Tj initial = 25°C ITSM .


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