20V Dual N Channel MOSFETs
PDEV2220Z
General Description These dual N Channel enhancement mode power field effect tran...
20V Dual N Channel MOSFETs
PDEV2220Z
General Description These dual N Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS 20V
RDSON 300m
ID 800mA
Features Fast switching Green Device Available
Suit for 1.5V Gate Drive Applications
SOT363 Dual Pin Configuration
D1 G2 S2 S1 G1 D2
G1
D1 G2
S1
Applications D2 Notebook
Load Switch Networking Hand-held Instruments
S2
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=...