20V Dual P Channel MOSFETs
PDEV2219Z
General Description
These dual P Channel enhancement mode power field effect tran...
20V Dual P Channel MOSFETs
PDEV2219Z
General Description
These dual P Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT363 Dual Pin Configuration
D1
S2 G2 D1
G1
D2 G2
BVDSS -20V
RDSON 600m
ID -540mA
Features
Fast switching Green Device Available
Suit for 1.5V Gate Drive Applications
Applications
Notebook Load Switch Networking Hand-held Instruments
D2 G1 S1
S1
S2
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (...