PDEV2120Y

20V N+P Dual Channel MOSFETs PDEV2120Y General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT563 Dual Pin Configuration BVDSS 20V -20V RDSON 300m 600m ID 800mA -400mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications D1 G2 S2 S1 G1 D2 D1 D2 Applications G1 G2 S1 S2  Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed...