Preliminary datasheet
20V Dual N Channel MOSFETs
PDEV2220V
General Description
These dual N Channel enhancement mode ...
Preliminary datasheet
20V Dual N Channel MOSFETs
PDEV2220V
General Description
These dual N Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS 20V
RDSON 300m
ID 800mA
Features
Fast switching Green Device Available
Suit for 1.5V Gate Drive Applications
SOT963 Dual Pin Configuration
D1G2 S2
D1 G1 G2
Applications
D2 Notebook Load Switch Networking Hand-held Instruments
S1 G1 D2
S1 S2
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1...