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PDK3612 Dataheets PDF



Part Number PDK3612
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDK3612 DatasheetPDK3612 Datasheet (PDF)

30V N-Channel MOSFETs PDK3612 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D D S D G G S BVDSS 30V RDSON 32m ID 6.5A.

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30V N-Channel MOSFETs PDK3612 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D D S D G G S BVDSS 30V RDSON 32m ID 6.5A Features  20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications Applications  Notebook  Load Switch  Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Diss.


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