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30V N-Channel MOSFETs
PDK3612
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT89 Pin Configuration
D
D S
D G
G S
BVDSS 30V
RDSON 32m
ID 6.5A
Features 20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications
Applications
Notebook Load Switch Hend-Held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Diss.