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PDK3908 Dataheets PDF



Part Number PDK3908
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDK3908 DatasheetPDK3908 Datasheet (PDF)

Preliminary datasheet 30V N-Channel MOSFETs PDK3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D S D G G D S BVDSS 3.

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Preliminary datasheet 30V N-Channel MOSFETs PDK3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D S D G G D S BVDSS 30V RDSON 15.5m ID 7.5A Features  30V, 7.5A, RDS(ON)=15.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Notebook  Load Switch  LED applications  Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissi.


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