Document
Preliminary datasheet
30V N-Channel MOSFETs
PDK3908
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT89 Pin Configuration
D S
D G
G
D S
BVDSS 30V
RDSON 15.5m
ID 7.5A
Features
30V, 7.5A, RDS(ON)=15.5mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
Applications
Notebook Load Switch LED applications Hand-Held Device
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissi.